
Germany Launches GaN-on-Si MicroLED Collaborative R&D Project to Drive Breakthroughs in Next-Generation Display Technology
Germany launches a GaN-on-Si MicroLED collaborative R&D project, focusing on enhancing display technology performance and mass production capabilities to drive the development of high-end applications such as AR/VR. The project, led by the Fraunhofer Institute, has achieved a 10-micron pixel array, accelerating the commercialization of the technology. Domestic company Guangpu Electronics is also actively investing in this area, contributing to the global innovation and upgrading of the LED industry.
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